Antimony sulfide3/12/2023 ![]() First, the impact of different Se/(S + Se) compositional ratios and absorber thicknesses on Sb2(S1-xSex)3 solar cell parameters under the radiative limit is studied, demonstrating that an efficiency of 29% can be achieved under Se/(S + Se) compositional ratios in the range of 0.34-0.48 for Sb2(S1-xSex)3 thicknesses higher than 1.5 μm. In this work, we present results on Sb2(S1-xSex)3 solar cell modeling under the radiative and non-radiative limits for the first time, where our results are compared to experimental reported data. In particular, no theoretical works on Sb2(S1-xSex)3 solar cell modeling have been previously reported. However, Sb2(S1-xSex)3 inorganic solar cell efficiencies are still limited to values lower than 7%, further studies contributing to a better understanding of the limiting factors behind this technology being necessary. The compound Sb2(S1-xSex)3 has recently attracted a great deal of attention from the scientific community for solar cell applications. The open circuit voltage of these cells are 0.478 V and 0.627 V, respectively, with conversion efficiencies of 1.3% and 1.13%. The increase is due to improved external quantum efficiency toward the ultraviolet region. This cell showed notable increase in the short circuit current density (10.86 mA/cm ² ) with respect the solar cell, FTO/CdS/Sb2S3/C (6.28 mA/cm ² ). ![]() Such films on F-doped SnO 2 (FTO) film was used in antimony sulfide solar cell: FTO/AZMO/Sb2S3/C-Ag. Thus, the AZMO film is converted to a high resistive transparent n-type film for solar cell. For AZMO film these values are, 10 and 10 ⁻⁴⁻¹ cm ⁻¹, respectively. The electrical conductivity (s) of AZO film is 80 ⁻¹ cm ⁻¹, which reduces to 0.2 ⁻¹ cm ⁻¹ when the film was heated in air at 300☌. AZMO film is of bandgap 3.62 eV, compared with 3.25 eV for Zn 0.96 Al 0.04 O (AZO) film. f.) argon-ion sputtering from commercial ZnO:Al and Mg-metal targets with 150 and 200 W of applied r. Zn 0.80 Mg 0.17 Al 0.0 3O (AZMO) thin film of 180-200 nm in thickness was produced by radio frequency (r. Direct use of an abundant mineral as the evaporation source in thin film solar cell technology is a novelty. Electrical conductivity of the Sb2SxSe3 − x absorber films in the dark increased from 10− 8 to 10− 6 Ω− 1 cm− 1 and their photoconductivity, from 10− 6 to 10− 5 Ω− 1 cm− 1 as the composition changed from Sb2S3 to Sb2SxSe3 − x and Sb2Se3. Solar cells of SnO2:F/CdS (100 nm)/Sb2S3(250 nm)/C-Ag prepared by using stibnite as evaporation source gave under standard conditions, open circuit voltage (Voc), 0.668 V short circuit current density (Jsc), 6.95 mA/cm² and conversion efficiency (η), 1.62%. Source mixtures of different weight – by – weight (w/w) ratios gave thin films of chemical composition Sb2SxSe3 − x and optical band gap (Eg) within 1.38 eV (Sb2Se3) – 1.88 eV (Sb2S3). To stibnite powder was added Sb2Se3 powder prepared in our laboratory as chemical precipitate. The added minerals were left as residue in the crucible and did not incorporate into the Sb2S3 thin film. ![]() Locally sourced powdered stibnite containing some quartzite (SiO2) and ferrosilite (FeSiO3) has been used in this work as evaporation source for vacuum deposition of thin film solar cells. Stibnite (Sb2S3) is a major mineral of antimony, which occurs as large crystals often with minor encrustations of other minerals.
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